The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Feb. 03, 2021
Taiwan Semicondutor Manufacturing Company Limited, Hsinchu, TW;
Shih-Yao Lin, New Taipei, TW;
Chih-Han Lin, Hsinchu, TW;
Shu-Yuan Ku, Zhubei, TW;
Shu-Uei Jang, Hsinchu, TW;
Ya-Yi Tsai, Hsinchu, TW;
I-Wei Yang, Yilan County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsinchu, TW;
Abstract
A semiconductor device includes a first semiconductor fin extending along a first direction. The semiconductor device includes a second semiconductor fin also extending along the first direction. The semiconductor device includes a dielectric structure disposed between the first and second semiconductor fins. The semiconductor device includes a gate isolation structure vertically disposed above the dielectric structure. The semiconductor device includes a metal gate layer extending along a second direction perpendicular to the first direction, wherein the metal gate layer includes a first portion straddling the first semiconductor fin and a second portion straddling the second semiconductor fin. The gate isolation structure separates the first and second portions of the metal gate layer from each other and includes a bottom portion extending into the dielectric structure.