The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Jul. 27, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chun-Yuan Chen, Hsinchu, TW;
Li-Zhen Yu, Hsinchu, TW;
Huan-Chieh Su, Hsinchu, TW;
Lo-Heng Chang, Hsinchu, TW;
Cheng-Chi Chuang, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/76224 (2013.01); H01L 21/7682 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823814 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/66795 (2013.01); H01L 29/78696 (2013.01); H01L 29/6681 (2013.01);
Abstract
During a front side process of a wafer, a hard mask layer is formed under a metal portion of a semiconductor device, and an epitaxial layer is deposited to form epitaxial portions of the semiconductor device. In a back side process of the wafer to cut the epitaxial layer, the metal portion is covered and protected by the hard mask layer from damages during etching of the epitaxial layer.