The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Jun. 07, 2021
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Yi Jing Wang, Tainan, TW;

Chia-Chang Hsu, Kaohsiung, TW;

Chien-Hao Chen, Tainan, TW;

Chang-Mao Wang, Tainan, TW;

Chun-Chi Yu, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); G03F 7/2022 (2013.01); G03F 7/70633 (2013.01); H01L 21/31144 (2013.01); H01L 22/20 (2013.01); H01L 23/544 (2013.01);
Abstract

The embodiments of the disclosure provide a patterning method, which includes the following processes. A target layer is formed on a substrate. A hard mask layer is formed over the target layer. A first patterning process is performed on the hard mask layer by using a photomask having a first pattern with a first pitch. The photomask is shifted along a first direction by a first distance. A second patterning process is performed on the hard mask layer by using the photomask that has been shifted, so as to form a patterned hard mask. The target layer is patterned using the patterned hard mask to form a patterned target layer. The target layer has a second pattern with a second pitch less than the first pitch.


Find Patent Forward Citations

Loading…