The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Nov. 01, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jeffrey S. McNeil, Nampa, ID (US);

Sivagnanam Parthasarathy, Carlsbad, CA (US);

Kishore Kumar Muchherla, Fremont, CA (US);

Patrick R. Khayat, San Diego, CA (US);

Sead Zildzic, Rancho Cordova, CA (US);

Violante Moschiano, Avezzano, IT;

James Fitzpatrick, Laguna Niguel, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 16/34 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0611 (2013.01); G06F 3/064 (2013.01); G06F 3/0679 (2013.01); G11C 16/3459 (2013.01); G11C 29/52 (2013.01);
Abstract

A method includes receiving, by control logic of a memory device, a copyback clear command from a processing device; causing, in response to the copyback clear command, a page buffer to perform a dual-strobe read operation on first memory cells configured as single-level cells, the dual-strobe read operation including a soft strobe at a first threshold voltage and a hard strobe at a second threshold voltage that are sensed between threshold voltage distributions of the first memory cells; causing the page buffer to determine a number of one bit values within the threshold voltage distributions detected in a threshold voltage range between the first/second threshold voltages; and causing, in response to the number of one bit values not satisfying a threshold criterion, a copyback of data in the first memory cells to second memory cells configured as high-level cells without intervention from the processing device.


Find Patent Forward Citations

Loading…