The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Nov. 03, 2021
International Business Machines Corporation, Armonk, NY (US);
Julien Frougier, Albany, NY (US);
Nicolas Loubet, Guilderland, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Maruf Amin Bhuiyan, Albany, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a semiconductor substrate, a first pair of FET (field effect transistor) gate structures separated by a first gate canyon having a first gate canyon spacing, disposed upon the semiconductor substrate, a second pair of FET gate structures separated by a second gate canyon having a second gate canyon spacing, disposed upon the substrate, a first S/D (source/drain region disposed in the first gate canyon, a second S/D region disposed in the second gate canyon, a first BDI (bottom dielectric isolation) element disposed below the first S/D region and having a first BDI thickness, and a second BDI element disposed below the second S/D region and having a second BDI thickness. The first BDI thickness exceeds the second BDI thickness.