The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Jul. 29, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jhu-Min Song, Nantou County, TW;
Chien-Chih Chou, New Taipei, TW;
Kong-Beng Thei, Hsinchu County, TW;
Fu-Jier Fan, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes a substrate, a gate electrode, a gate dielectric layer, first protection structures, a second protection structure and an insulating layer. The gate electrode is disposed within the substrate. The gate dielectric layer is disposed within the substrate and laterally surrounds the gate electrode. The first protection structures are disposed over the gate electrode. The second protection structure is disposed over the gate dielectric layer. The insulating layer is between the second protection structure and the gate dielectric layer.