The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2024

Filed:

Feb. 07, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Katie Lutker-Lee, Albany, NY (US);

Angelique Raley, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 21/0337 (2013.01);
Abstract

A method of processing a substrate that includes: depositing a photoactive metal-based hard mask (photo-MHM) over an underlying layer, the underlying layer formed over a substrate, the photo-MHM including a metal; depositing a dielectric over the photo-MHM; etching a portion of the dielectric to form a first feature; depositing a spacer material over the first feature; etching the spacer material to expose top surfaces of the dielectric and a first portion of the photo-MHM; exposing the photo-MHM to a first ultraviolet light (UV) radiation through a first photomask, a first unmasked region of the photo-MHM being photoreacted due to the exposure to the first UV radiation; after the exposure, developing the photo-MHM to form a second feature in the photo-MHM; and etching the underlying layer using the photo-MHM as an etch mask.


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