The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Oct. 18, 2021
Applicant:
Kla Corporation, Milpitas, CA (US);
Inventors:
Jan Lauber, San Francisco, CA (US);
Jason Kirkwood, Mountain View, CA (US);
Assignee:
KLA CORPORATION, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/12 (2017.01); G01N 21/95 (2006.01); G06T 5/20 (2006.01); G06T 5/40 (2006.01); G06T 7/00 (2017.01); G06T 7/13 (2017.01); G06T 7/90 (2017.01);
U.S. Cl.
CPC ...
G06T 7/0006 (2013.01); G01N 21/9501 (2013.01); G06T 5/20 (2013.01); G06T 5/40 (2013.01); G06T 7/12 (2017.01); G06T 7/13 (2017.01); G06T 7/90 (2017.01); G06T 2207/20021 (2013.01); G06T 2207/30148 (2013.01);
Abstract
A location of grid lines in an image of a laser-annealed semiconductor wafer is determined. An area covered by the grid lines can be filled using a new gray value. The new gray value can be based on a second gray scale value of a neighborhood around the area. The neighborhood is outside of the area covered by the grid lines.
Lauber, Jan. (2024). Laser anneal pattern suppression (U.S. Patent No. 12100132). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12100132
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile