The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Aug. 05, 2020
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Toyota Tsusho Corporation, Nagoya, JP;
Tadaaki Kaneko, Hyogo, JP;
Kiyoshi Kojima, Tokyo, JP;
KWANSEI GAKUIN EDUCATIONAL FOUNDATION, Hyogo, JP;
TOYOTA TSUSHO CORPORATION, Nagoya, JP;
Abstract
The present invention addresses the problem of providing a novel SiC substrate production method. The SiC substrate production method according to the present invention comprises an etching step Sof etching a SiC base substrate, a crystal growth step Sof growing a SiC substrate layeron the SiC base substrateto produce a SiC substrate body, and a peeling step Sof peeling at least a portion of the SiC substrate bodyto produce a SiC substrate, the method being characterized in that each of the etching step Sand the crystal growth step Sis a step of arranging the SiC base substrateand a SiC materialso as to face each other and heating the SiC base substrateand the SiC materialso as to form a temperature gradient between the SiC base substrateand the SiC material
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile