The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Apr. 11, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yung-Chih Wang, Taoyuan, TW;
Yu-Chieh Liao, Taoyuan, TW;
Tai-I Yang, Hsinchu, TW;
Hsin-Ping Chen, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a nanostructure, a gate dielectric layer, a gate electrode, and a gate contact. The nanostructure is over a substrate. The gate dielectric layer laterally surrounds the nanostructure. The gate electrode laterally surrounds the gate dielectric layer. The gate electrode has a bottom surface and a top surface both higher than a bottom end of the nanostructure. The gate electrode has a horizontal dimension decreasing from the bottom surface to the top surface. The gate contact is electrically coupled to the gate electrode.