The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Dec. 10, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Hui Chen, HsinChu, TW;
Wan-Te Chen, Danshui, TW;
Shu-Wei Chung, Taichung, TW;
Tung-Heng Hsieh, Zhudong, TW;
Tzu-Ching Chang, Dali, TW;
Tsung-Hsin Yu, Hsinchu, TW;
Yung Feng Chang, HsinChu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate. A first nanosheet structure and a second nanosheet structure are disposed on the substrate. Each of the first and second nanosheet structures have at least one nanosheet forming source/drain regions and a gate structure including a conductive gate contact. A first oxide structure is disposed on the substrate between the first and second nanosheet structures. A conductive terminal is disposed in or on the first oxide structure. The conductive terminal, the first oxide structure and the gate structure of the first nanosheet structure define a capacitor.