The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Dec. 06, 2021
Applicant:

Stats Chippac Pte. Ltd., Singapore, SG;

Inventors:

Yaojian Lin, Singapore, SG;

Heinz-Peter Wirtz, Dottingen, CH;

Seung Wook Yoon, Singapore, SG;

Pandi C. Marimuthu, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/28 (2006.01); H01L 21/3105 (2006.01); H01L 21/56 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/565 (2013.01); H01L 21/31058 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/78 (2013.01); H01L 23/28 (2013.01); H01L 23/3114 (2013.01); H01L 23/3121 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/3142 (2013.01); H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 21/568 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05172 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/97 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/10335 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.


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