The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Mar. 03, 2022
Applicant:

Kla Corporation, Milpitas, CA (US);

Inventors:

Mark Ghinovker, Yoqneam Ilit, IL;

Yoel Feler, Haifa, IL;

Assignee:

KLA Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/68 (2017.01); G03F 9/00 (2006.01); G06T 7/00 (2017.01); G06T 7/73 (2017.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G06T 7/0004 (2013.01); G03F 9/7092 (2013.01); G06T 7/68 (2017.01); G06T 7/73 (2017.01); G06T 2207/30148 (2013.01); H01L 21/0274 (2013.01);
Abstract

A method of semiconductor metrology includes patterning a film layer on a semiconductor substrate to define a first field on the semiconductor substrate with a first pattern comprising at least a first target feature within a first margin along a first edge of the first field and to define a second field, which abuts the first field, with a second pattern comprising at least a second target feature within a second margin along a second edge of the second field, such that the second edge of the second field adjoins the first edge of the first field. The first target feature in the first margin is adjacent to the second target feature in the second margin without overlapping the second target feature. An image is captured of at least the first and second target features and is processed to detect a misalignment between the first and second fields.


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