The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Wei Liao, Taoyuan, TW;

Tung-Hung Feng, Hsinchu, TW;

Hui-Chun Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 7/00 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); G03F 7/0035 (2013.01); G03F 7/11 (2013.01); G03F 7/168 (2013.01);
Abstract

In a method of manufacturing a semiconductor device, a hydrophobic solvent as a gas is directed to flow over a bevel region of a wafer. A layer of the hydrophobic solvent is deposited on an upper bevel of the bevel region on top surface of the wafer and on a lower bevel of the bevel region on bottom surface of the wafer. A metal-containing photo resist layer is disposed on an internal region of the top surface of the wafer enclosed by the bevel region. During a subsequent processing operation, a photo resist material of the metal-containing photo resist layer is blocked off inside the top surface of the wafer by the layer of the hydrophobic solvent.


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