The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jan. 15, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tai-Yu Chen, Hsinchu, TW;
Heng-Hsin Liu, Hsinchu, TW;
Li-Jui Chen, Hsinchu, TW;
Shang-Chieh Chien, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G21K 1/06 (2006.01); H05G 2/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01); G03F 7/7055 (2013.01); G03F 7/7085 (2013.01); G03F 7/70916 (2013.01); G21K 1/065 (2013.01); H05G 2/005 (2013.01); H05G 2/008 (2013.01);
Abstract
A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.