The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Aug. 05, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Chun-Ren Cheng, Hsin-Chu, TW;
Chi-Yuan Shih, Hsinchu, TW;
Kai-Fung Chang, Taipei, TW;
Shih-Fen Huang, Jhubei, TW;
Yi-Chuan Teng, Zhubei, TW;
Yi Heng Tsai, Hsinchu, TW;
You-Ru Lin, New Taipei, TW;
Yan-Jie Liao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.