The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Dec. 13, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/265 (2013.01); H01L 21/324 (2013.01); H01L 21/76814 (2013.01); H01L 21/76897 (2013.01); H01L 29/6653 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/28518 (2013.01); H01L 21/76804 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device and method of manufacture are provided. A source/drain region is formed next to a spacer, which is adjacent to a gate electrode. An implantation is performed through an implantation mask into the source/drain region as well as the first spacer, forming an implantation region within the spacer.