The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Jul. 29, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Kuo-Chiang Ting, Hsinchu, TW;

Chi-Hsi Wu, Hsinchu, TW;

Shang-Yun Hou, Hsinchu, TW;

Tu-Hao Yu, Hsin-Chu, TW;

Chia-Hao Hsu, Hsinchu County, TW;

Pin-Tso Lin, Hsinchu, TW;

Chia-Hsin Chen, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/683 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/6835 (2013.01); H01L 23/49816 (2013.01); H01L 23/49894 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/3128 (2013.01); H01L 23/3171 (2013.01); H01L 24/09 (2013.01); H01L 24/13 (2013.01); H01L 24/17 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/17505 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device includes a dielectric interposer, a first redistribution layer, a second redistribution layer and conductive structures. The conductive structures are through the dielectric interposer, wherein the conductive structures are electrically connected to the first redistribution layer and the second redistribution layer. Each of the conductive structures has a tapered profile. A width of each of the conductive structures proximal to the first redistribution layer is narrower than a width of each of the conductive structure proximal to the second redistribution layer.


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