The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Han-Yu Tsai, Hsinchu, TW;
Zu-Yin Liu, Hsinchu, TW;
You-Ting Lin, Hsinchu, TW;
Jiun-Ming Kuo, Taipei, TW;
Kuo-Chin Liu, Hualien County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of the present disclosure includes forming a fin-shaped structure including a plurality of semiconductor layers, a first hard mask layer, a second hard mask layer, and a third hard mask layer, forming a patterned masking layer having a mask portion and a window portion, wherein the third hard mask layer is exposed through the window portion, performing a first etch process to expose the second hard mask layer through the window portion, performing a second etch process to etch the exposed second hard mask layer and to leave behind second hard mask layer residues, performing a third etch process to remove the second hard mask layer residues, etching the plurality of semiconductor layers in the fin-shaped structure through the window portion to divide the fin-shaped structure into a first segment and a second segment, and forming an isolation feature around the first segment and the second segment.