The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Aug. 25, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Keunwook Shin, Yongin-si, KR;

Sanghoon Ahn, Seongnam-si, KR;

Woojin Lee, Hwaseong-si, KR;

Kyung-Eun Byun, Seongnam-si, KR;

Junghoo Shin, Seoul, KR;

Hyeonjin Shin, Suwon-si, KR;

Yunseong Lee, Osan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7685 (2013.01); H01L 21/76843 (2013.01); H01L 21/76849 (2013.01); H01L 21/76855 (2013.01); H01L 21/28562 (2013.01);
Abstract

Provided is a method of forming an interconnect structure. The method includes preparing a substrate including a first metal layer and a first insulating layer, selectively forming a carbon layer having an spbonding structure on the first metal layer, selectively forming a second insulating layer on the first insulating layer, forming a third insulating layer to cover the second insulating layer, and forming a second metal layer electrically connected to the first metal layer.


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