The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Sep. 06, 2019
Applicant:

Board of Regents, the University of Texas System, Austin, TX (US);

Inventors:

Sidlgata V. Sreenivasan, Austin, TX (US);

Paras Ajay, Austin, TX (US);

Aseem Sayal, Austin, TX (US);

Mark McDermott, Austin, TX (US);

Jaydeep Kulkarni, Austin, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/39 (2020.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); G06F 111/14 (2020.01); G06F 113/18 (2020.01);
U.S. Cl.
CPC ...
G06F 30/39 (2020.01); H01L 21/67144 (2013.01); H01L 21/6835 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); G06F 2111/14 (2020.01); G06F 2113/18 (2020.01); H01L 2221/68327 (2013.01); H01L 2221/68363 (2013.01); H01L 2221/68381 (2013.01); H01L 2225/06544 (2013.01);
Abstract

Various embodiments of the present technology provide for the ultra-high density heterogenous integration, enabled by nano-precise pick-and-place assembly. For example, some embodiments provide for the integration of modular assembly techniques with the use of prefabricated blocks (PFBs). These PFBs can be created on one or more sources wafers. Then using pick-and-place technologies, the PFBs can be selectively arranged on a destination wafer thereby allowing Nanoscale-aligned 3D Stacked Integrated Circuit (N3-SI) and the Microscale Modular Assembled ASIC (M2A2) to be efficiently created. Some embodiments include systems and techniques for the construction of construct semiconductor devices which are arbitrarily larger than the standard photolithography field size of 26×33 mm, using pick-and-place assembly.


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