The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Oct. 13, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Zi-Ang Su, Taoyuan County, TW;
Ming-Shuan Li, Hsinchu County, TW;
Shu-Hua Wu, Hsinchu, TW;
Chih Chieh Yeh, Taipei, TW;
Chih-Hung Wang, Hsinchu, TW;
Wen-Hsing Hsieh, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
The present disclosure provides embodiments of semiconductor devices. In one embodiment, the semiconductor device includes a dielectric layer and a fin-shaped structure disposed over the dielectric layer. The fin-shaped structure includes a first p-type doped region, a second p-type doped region, and a third p-type doped region, and a first n-type doped region, a second n-type doped region, and a third n-type doped region interleaving the first p-type doped region, the second p-type doped region, and the third p-type doped region. The first p-type doped region, the third p-type doped region and the third n-type doped region are electrically coupled to a first potential. The second p-type doped region, the first n-type doped region and the second n-type doped region are electrically coupled to a second potential different from the first potential.