The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Aug. 26, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Alexander Reznicek, Troy, NY (US);

Wei Wang, Yorktown Heights, NY (US);

Tao Li, Slingerlands, NY (US);

Tsung-Sheng Kang, Ballston Lake, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); G11C 11/15 (2006.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01); G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H10B 61/00 (2023.02); G11C 11/15 (2013.01); H10B 61/10 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02); G11C 11/005 (2013.01); G11C 13/0004 (2013.01);
Abstract

An integrated circuit, a system, and a method to integrate phase change memory and magnetoresistive random access memory within a same integrated circuit in a system. The integrated circuit may include an MRAM and a PCM. The MRAM may include an MRAM bottom electrode, an MRAM stack, and an MRAM top electrode. The PCM may include a PCM bottom electrode, where the PCM bottom electrode has a lower height than the MRAM bottom electrode, a phase change material, and a PCM top electrode.


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