The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

May. 12, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Ling Chung, Hsinchu, TW;

Chun-Chih Cheng, Hsinchu, TW;

Ying-Liang Chuang, Hsinchu, TW;

Ming-Hsi Yeh, Hsinchu, TW;

Kuo-Bin Huang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); H01L 29/401 (2013.01);
Abstract

A method for selectively removing a tungsten-including layer includes: forming a tungsten-including layer which has a first portion and a second portion; performing a treatment on a surface region of the first portion of the tungsten-including layer so as to convert tungsten in the surface region into tungsten oxide; and partially removing the tungsten-including layer using an etchant which has a higher etching selectivity to tungsten than tungsten oxide such that the second portion of the tungsten-including layer is fully removed, and the first portion of the tungsten-including layer, having the tungsten oxide in the surface region, is at least partially retained.


Find Patent Forward Citations

Loading…