The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
May. 04, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tai-Yen Peng, Hsinchu, TW;
Hui-Hsien Wei, Taoyuan, TW;
Wei-Chih Wen, Hsinchu County, TW;
Pin-Ren Dai, Hsinchu County, TW;
Chien-Min Lee, Hsinchu County, TW;
Sheng-Chih Lai, Hsinchu County, TW;
Han-Ting Tsai, Kaohsiung, TW;
Chung-Te Lin, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A device includes a resistance switching layer, a capping layer, a top electrode, a first spacer, and a second spacer. The resistance switching layer is over a substrate. The capping layer is over the resistance switching layer. The top electrode is over the capping layer. The first spacer lines the resistance switching layer and the capping layer. The second spacer lines the first spacer. The capping layer is in contact with the top electrode, the first spacer, and the second spacer.