The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Feb. 09, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Che-Liang Chung, Hsinchu, TW;
Che-Hao Tu, Hsinchu, TW;
Kei-Wei Chen, Hsinchu, TW;
Chih-Wen Liu, Hsinchu, TW;
You-Shiang Lin, Hsinchu, TW;
Yi-Ching Liang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The current disclosure provides a semiconductor fabrication method that defines the height of gate structures at the formation of the gate structure. A gate line-end region is formed by removing a portion of a gate structure. A resulted recess is filled with a dielectric material is chosen to have a material property suitable for a later contact formation process of forming a metal contact. A metal contact structure is formed through the recess filling dielectric layer to connect to a gate structure and/or a source/drain region.