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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12066756 B1

PDFFull Text
Date of Patent:
Aug. 20, 2024

Filed:

Jul. 29, 2022

Method for lithography process

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chi-Hung Liao, New Taipei, TW;

Yueh-Lin Yang, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Martin J Angebranndt

Int. Cl.
CPC ...
G03F 1/24 (2012.01); B81B 3/00 (2006.01); G01C 19/5712 (2012.01); G01P 15/125 (2006.01); G01P 15/13 (2006.01); G03F 1/22 (2012.01); G03F 1/48 (2012.01); G03F 1/60 (2012.01); G03F 7/00 (2006.01); G01P 15/08 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/3213 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); B81B 3/0021 (2013.01); G01C 19/5712 (2013.01); G01P 15/125 (2013.01); G01P 15/131 (2013.01); G03F 1/22 (2013.01); G03F 1/48 (2013.01); G03F 1/60 (2013.01); G03F 7/70033 (2013.01); B81B 2201/025 (2013.01); B81B 2203/0181 (2013.01); B81B 2203/04 (2013.01); B81B 2207/07 (2013.01); G01P 2015/0831 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/32139 (2013.01); H01L 21/6833 (2013.01);
Abstract

A method includes holding a mask using an electrostatic chuck. The mask includes a substrate having a first bump and a second bump separated from the first bump and a patterned layer. The first bump and the second bump face the electrostatic chuck. The substrate is between the patterned layer and the electrostatic chuck. The first bump and the second bump are spaced apart from the patterned layer. The first bump and the second bump are ring strips in a top view, and the first bump has a rectangular cross section and the second bump has a triangular cross section. The method further includes generating extreme ultraviolet (EUV) radiation using an EUV light source; and directing the EUV radiation toward the mask, such that the EUV radiation is reflected by the mask.

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