The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2024

Filed:

Mar. 13, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Hao Lin, Hsinchu, TW;

Kian-Long Lim, Hsinchu, TW;

Chia-Hao Pao, Kaohsiung, TW;

Chih-Chuan Yang, Hsinchu, TW;

Chia-Wei Chen, Hsinchu, TW;

Chien-Chih Lin, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H10B 10/125 (2023.02); H01L 29/0673 (2013.01); H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01);
Abstract

Semiconductor structures and methods are provided. A method according to the present disclosure includes forming a first channel member, a second channel member directly over the first channel member, and a third channel member directly over the second channel member, depositing a first metal layer around each of the first channel member, the second channel member, and the third channel member, removing the first metal layer from around the second channel member and the third channel member while the first channel member remains wrapped around by the first metal layer, after the removing of the first metal layer, depositing a second metal layer around the second channel member and the third channel member, removing the second metal layer from around the third channel member, and after the removing of the second metal layer, depositing a third metal layer around the third channel member.


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