The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Jul. 20, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chih-Min Hsiao, Hsinchu, TW;
Chien-Wen Lai, Hsinchu, TW;
Ru-Gun Liu, Hsinchu, TW;
Chih-Ming Lai, Hsinchu, TW;
Shih-Ming Chang, Hsinchu, TW;
Yung-Sung Yen, Hsinchu, TW;
Yu-Chen Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Methods of forming line-end extensions and devices having line-end extensions are provided. In some embodiments, a method includes forming a patterned photoresist on a first region of a hard mask layer. A line-end extension region is formed in the hard mask layer. The line-end extension region extends laterally outward from an end of the first region of the hard mask layer. The line-end extension region may be formed by changing a physical property of the hard mask layer at the line-end extension region.