The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Apr. 14, 2020
Lam Research Corporation, Fremont, CA (US);
Jengyi Yu, San Ramon, CA (US);
Samantha S. H. Tan, Newark, CA (US);
Liu Yang, Seattle, WA (US);
Chen-Wei Liang, El Cerrito, CA (US);
Boris Volosskiy, San Jose, CA (US);
Richard Wise, Los Gatos, CA (US);
Yang Pan, Los Altos, CA (US);
Da Li, Newark, CA (US);
Ge Yuan, New Haven, CT (US);
Andrew Liang, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Provided herein are methods and systems for reducing roughness of an EUV resist and improving etched features. The methods involve descumming an EUV resist, filling divots of the EUV resist, and protecting EUV resists with a cap. The resulting EUV resist has smoother features and increased selectivity to an underlying layer, which improves the quality of etched features. Following etching of the underlying layer, the cap may be removed.