The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2024

Filed:

Nov. 10, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ming-Fa Chen, Taichung, TW;

Tzuan-Horng Liu, Longtan Township, TW;

Chao-Wen Shih, Zhubei, TW;

Sung-Feng Yeh, Taipei, TW;

Nien-Fang Wu, Chiayi, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 21/3105 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/544 (2006.01); H01L 25/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/31053 (2013.01); H01L 21/56 (2013.01); H01L 21/6836 (2013.01); H01L 21/76877 (2013.01); H01L 21/78 (2013.01); H01L 23/3135 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 23/544 (2013.01); H01L 24/05 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/27 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 25/50 (2013.01); H01L 22/32 (2013.01); H01L 24/29 (2013.01); H01L 2221/68327 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/27616 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/8313 (2013.01); H01L 2224/83896 (2013.01); H01L 2224/92244 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06586 (2013.01);
Abstract

In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.


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