The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Apr. 21, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Tung-Ting Wu, Taipei, TW;
Chen-Jong Wang, Hsin-Chu, TW;
Jen-Cheng Liu, Hsin-Chu, TW;
Yimin Huang, Hsinchu, TW;
Chin-Chia Kuo, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed towards a method for forming a semiconductor device, the method including forming a plurality of photodetectors in a substrate. A device isolation structure is formed within the substrate. The device isolation structure laterally wraps around the plurality of photodetectors. An outer isolation structure is formed within the substrate. The device isolation structure is spaced between sidewalls of the outer isolation structure. The device isolation structure and the outer isolation structure comprise a dielectric material.