The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Aug. 16, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsiang-Lun Kao, Taoyuan, TW;
Hsiang-Wei Liu, Tainan, TW;
Tai-I Yang, Hsinchu, TW;
Jian-Hua Chen, Hsinchu, TW;
Yu-Chieh Liao, Taoyuan, TW;
Yung-Chih Wang, Taoyuan, TW;
Tien-Lu Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Abstract
A method comprises forming a first conductive line and a second conductive line in a first dielectric layer over a substrate, each having a planar top surface, applying an etch-back process to the first dielectric layer until a dielectric portion between the first conductive line and the second conductive line has been removed, and the first conductive line and the second conductive line have respective cross sectional shapes including a rounded surface and two rounded corners and depositing a second dielectric layer over the substrate, while leaving a first air gap between the first conductive line and the second conductive line.