The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jul. 29, 2022
Applicants:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsmc Nanjing Company, Limited, Nanjing, CN;
Inventors:
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
TSMC NANJING COMPANY, LIMITED, Nanjing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/285 (2006.01); H01L 21/288 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76807 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/28568 (2013.01); H01L 21/2885 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76873 (2013.01); H01L 21/76877 (2013.01); H01L 23/5283 (2013.01); H01L 23/53228 (2013.01);
Abstract
A method includes depositing a metallic hardmask over a dielectric layer. The method further includes etching a metallic hardmask opening in the metallic hardmask to expose a top surface of the dielectric layer. Th method further includes modifying a sidewall of the metallic hardmask opening by adding non-metal atoms into the metallic hardmask. The method further includes depositing a conductive material in the metallic hardmask opening.