The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jan. 20, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Hitoshi Kato, Iwate, JP;
Hiroyuki Kikuchi, Iwate, JP;
Shinji Asari, Iwate, JP;
Yuji Sawada, Yamanashi, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/50 (2006.01); H01L 21/687 (2006.01); C23C 16/458 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32422 (2013.01); C23C 16/50 (2013.01); H01J 37/32082 (2013.01); H01J 37/32715 (2013.01); H01L 21/68771 (2013.01); C23C 16/4584 (2013.01); H01J 37/3211 (2013.01); H01J 37/3244 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/332 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/68764 (2013.01);
Abstract
A plasma processing apparatus includes a process chamber. A turntable is disposed in the process chamber and is configured to receive a substrate along a circumferential direction thereof. A process gas supply nozzle is configured to supply a process gas to the turntable. A plasma antenna is disposed on the process chamber at a position covering at least a part of the process gas supply nozzle. An ion trap plate is disposed over the process gas supply nozzle at a position overlapping at least a part of the plasma antenna in the process chamber.