The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 30, 2024

Filed:

Aug. 08, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ren-Guan Duan, Hsinchu, TW;

Chen-Hsiang Lu, Hsinchu, TW;

Chiun-Da Shiue, Hsinchu, TW;

Chih-Kai Hu, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/405 (2013.01); C23C 16/45529 (2013.01); C23C 16/45553 (2013.01);
Abstract

A method includes forming a first coating comprising amorphous rare earth metal-containing oxide on a surface of an article using a first atomic layer deposition (ALD) process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles Ntimes. The method also includes forming a second coating comprising crystalline rare earth metal oxide on the first coating using a second ALD process. The method also includes forming a third coating comprising amorphous rare earth metal-containing oxide on the second coating using a third ALD process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles Ntimes. The method also includes forming a fourth coating comprising crystalline rare earth metal oxide on the third coating using a fourth ALD process. In some embodiments, a ratio of Nto Nis between about 100 and about 150.


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