The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Aug. 31, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Yu Lai, Hsinchu, TW;

Chih-Liang Chen, Hsinchu, TW;

Ching-Wei Tsai, Hsinchu, TW;

Shang-Wen Chang, Hsinchu, TW;

Li-Chun Tien, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/768 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 23/535 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 27/1259 (2013.01);
Abstract

A semiconductor device includes a base isolation layer, a first transistor with a first source electrode at a first side of the base isolation layer. A bridge pillar extends through the base isolation layer, and a metal electrode electrically connects the bridge pillar to the first source electrode. The metal electrode and the first source electrode are at the same side of the base isolation layer. A second metal electrode at an opposite side of the base isolation layer electrically connects to the bridge pillar and to a conductive line at the second side of the base isolation layer.


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