The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 09, 2024

Filed:

Jul. 06, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chung-Hsuan Liu, Taichung, TW;

Chen-Yang Lin, Zhudong Township, TW;

Ku-Hsiang Sung, Taoyuan, TW;

Da-Wei Yu, Hsinchu, TW;

Kuan-Wen Lin, Taichung, TW;

Chia-Jen Chen, Jhudong Township, TW;

Hsin-Chang Lee, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); B08B 7/00 (2006.01); B08B 13/00 (2006.01); H01L 21/02 (2006.01); H01L 21/66 (2006.01); H05H 1/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70925 (2013.01); B08B 7/0035 (2013.01); B08B 13/00 (2013.01); H01L 21/02057 (2013.01); H01L 22/12 (2013.01); H05H 1/01 (2021.05);
Abstract

In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.


Find Patent Forward Citations

Loading…