The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Aug. 09, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Tien Shen, Tainan, TW;

Chih-Kai Yang, Taipei, TW;

Hsiang-Ming Chang, Hsinchu, TW;

Chun-Yen Chang, Hsinchu, TW;

Ya-Hui Chang, Hsinchu, TW;

Wei-Ting Chien, Hsinchu, TW;

Chia-Cheng Chen, Hsinchu, TW;

Liang-Yin Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); H01L 21/02359 (2013.01); H01L 21/28088 (2013.01); H01L 21/32133 (2013.01); H01L 21/32139 (2013.01); H01L 29/66545 (2013.01);
Abstract

A method for forming a semiconductor device is provided. The method for forming a semiconductor device is provided. The method includes coating a photoresist film over a target layer; performing a lithography process to pattern the photoresist film into a photoresist layer; performing a directional ion bombardment process to the photoresist layer, such that a carbon atomic concentration in the photoresist layer is increased; and etching the target layer using the photoresist layer as an etch mask.


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