logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12020942 B1

PDFFull Text
Date of Patent:
Jun. 25, 2024

Filed:

Apr. 25, 2022

Etching method

Applicant:

Ulvac, Inc., Kanagawa, JP;

Inventors:

Taichi Suzuki, Kanagawa, JP;

Yasuhiro Morikawa, Kanagawa, JP;

Kenta Doi, Kanagawa, JP;

Toshiyuki Nakamura, Kanagawa, JP;

Assignee:

ULVAC, INC., Kanagawa, JP;

Attorney:

Grossman, Tucker, Perreault & Pfleger, PLLC

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
H01L 21/3065 (2006.01); B81C 1/00 (2006.01); C23C 14/02 (2006.01); C23C 14/34 (2006.01); H01J 37/32 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); B81C 1/00531 (2013.01); B81C 1/00619 (2013.01); C23C 14/021 (2013.01); C23C 14/34 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32541 (2013.01); H01J 37/32568 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); B81C 2201/0112 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/014 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3341 (2013.01); H01J 2237/3342 (2013.01);
Abstract

An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

Find Patent Forward Citations

Loading…