The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Mar. 28, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yih-Ann Lin, Hsinchu County, TW;
Ryan Chia-Jen Chen, Hsinchu, TW;
Donald Y. Chao, Hsinchu County, TW;
Yi-Shien Mor, Hsinchu, TW;
Kuo-Tai Huang, HsinChu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, an isolation structure in the semiconductor substrate for isolating a first active region and a second active region, a first device formed in the first active region, and a second device formed in the second active region. The first device has a first gate dielectric layer and a first gate electrode over the first gate dielectric layer. The first gate electrode includes at least one of Ta and C, and has a first work function for a first conductivity. The second device has a second gate dielectric layer and a second gate electrode over the second gate dielectric layer. The second gate electrode includes at least one of Ta, C, and Al, and has a second work function for a second conductivity. The second conductivity is different from the first conductivity.