The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Aug. 31, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Yu Lin, Hsinchu, TW;
Jung-Chan Yang, Hsinchu, TW;
Hui-Zhong Zhuang, Hsinchu, TW;
Sheng-Hsiung Chen, Hsinchu, TW;
Kuo-Nan Yang, Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Lee-Chung Lu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An IC device includes first and second cells adjacent each other and over a substrate. The first cell includes a first IO pattern along a first track among a plurality of tracks in a first metal layer, the plurality of tracks elongated along a first axis and spaced from each other along a second axis. The second cell includes a plurality of conductive patterns along corresponding different tracks among the plurality of tracks in the first metal layer, each of the plurality of conductive patterns being an IO pattern of the second cell or a floating conductive pattern. The first metal layer further includes a first connecting pattern along the first track and connects the first IO pattern and a second IO pattern of the second cell. The second IO pattern is one of the plurality of conductive patterns of the second cell and is along the first track.