The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
May. 20, 2022
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
Steven M. Bilodeau, Fairfield, CT (US);
Claudia Yevenes, White Plains, NY (US);
Juhee Yeo, Suwon, KR;
Assignee:
ENTEGRIS, INC., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/06 (2006.01); B81C 1/00 (2006.01); C09K 13/04 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C09K 13/06 (2013.01); B81C 1/00539 (2013.01); C09K 13/04 (2013.01); H01L 21/30604 (2013.01); H01L 21/311 (2013.01); H01L 21/32134 (2013.01);
Abstract
The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.