The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Apr. 17, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Zhi-Chang Lin, Hsinchu County, TW;

Wei-Hao Wu, Hsinchu, TW;

Jia-Ni Yu, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/535 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 23/535 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device includes an active fin disposed on a substrate, a gate structure, and a pair of gate spacers disposed on sidewalls of the gate structure, in which the gate structure and the gate spacers extend across a first portion of the active fin, and a bottom surface of the gate structure is higher than a bottom surface of the gate spacers.


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