The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Apr. 06, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Digvijay A. Raorane, Chandler, AZ (US);

Ian En Yoon Chin, Georgetown, MY;

Daniel N. Sobieski, Phoenix, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/49 (2006.01); H01L 21/50 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/50 (2013.01); H01L 23/498 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 23/3121 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/18 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/3511 (2013.01);
Abstract

Embodiments include semiconductor device packages and methods of forming such packages. In an embodiment, the package may include a die-side reinforcement layer with a cavity formed through the die-side reinforcement layer. A die having a first side and an opposite second side comprising a device side may be positioned in the cavity with the first side of the die being substantially coplanar with a first side of the die-side reinforcement layer. In an embodiment, a build-up structure may be coupled to a second side of the die. Embodiments include a build-up structure that includes a plurality of alternating layers of patterned conductive material and insulating material.


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