The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Sep. 07, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Sivagnanam Parthasarathy, Carlsbad, CA (US);

James Fitzpatrick, Laguna Niguel, CA (US);

Patrick Robert Khayat, San Diego, CA (US);

AbdelHakim S. Alhussien, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/12 (2006.01); G11C 29/44 (2006.01); G11C 29/46 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 29/12005 (2013.01); G11C 29/44 (2013.01); G11C 29/46 (2013.01); G11C 16/26 (2013.01); G11C 2207/2254 (2013.01);
Abstract

A memory device to program a group of memory cells to store multiple bits per memory cell. Each bit per memory cell in the group from a page. After determining a plurality of read voltages of the group of memory cells, the memory device can read the multiple pages of the group using the plurality of read voltages. For each respective page in the multiple pages, the memory device can determine a count of first memory cells in the respective page that have threshold voltages higher than a highest read voltage, among the plurality of read voltages, used to read the respective page. The count of the first memory cells can be compared with a predetermined range of a fraction of memory cells in the respective page to evaluate the plurality of read voltages (e.g., whether any of the read voltages is in a wrong voltage range).


Find Patent Forward Citations

Loading…