The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Mar. 02, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Sivagnanam Parthasarathy, Carlsbad, CA (US);

James Fitzpatrick, Laguna Niguel, CA (US);

Patrick Robert Khayat, San Diego, CA (US);

Abdelhakim S. Alhussien, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G06F 9/30 (2018.01); G06F 9/38 (2018.01); G06F 18/243 (2023.01); H03M 13/00 (2006.01); H03M 13/01 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 9/30021 (2013.01); G06F 9/30101 (2013.01); G06F 9/3804 (2013.01); G06F 18/24323 (2023.01); H03M 13/015 (2013.01); H03M 13/612 (2013.01);
Abstract

A memory sub-system configured to: measure a plurality of sets of signal and noise characteristics of a group of memory cells in a memory device; determine a plurality of optimized read voltages of the group of memory cells from the plurality of sets of signal and noise characteristics respectively; generate features from the plurality of sets of signal and noise characteristics, including at least one compound feature generated from the plurality of sets of signal and noise characteristics; generate, using the features, a classification of a bit error rate of data retrievable from the group of memory cells; and control an operation to read the group of memory cells based on the classification.


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