The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2024

Filed:

Jul. 21, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Fong Tsai, Hsinchu, TW;

Cheng-I Chu, Taipei, TW;

Jyh-Cherng Sheu, Hsinchu, TW;

Huicheng Chang, Tainan, TW;

Yee-Chia Yeo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/367 (2006.01); H01L 23/46 (2006.01); H01L 23/528 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/3672 (2013.01); H01L 23/46 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01);
Abstract

Semiconductor devices having improved heat dissipation and methods of forming the same are disclosed. In an embodiment, a device includes a first transistor structure; a front-side interconnect structure on a front-side of the first transistor structure, the front-side interconnect structure including front-side conductive lines; a backside interconnect structure on a backside of the first transistor structure, the backside interconnect structure including backside conductive lines, the backside conductive lines having line widths greater than line widths of the front-side conductive lines; and a first heat dissipation substrate coupled to the backside interconnect structure.


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