The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Aug. 27, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Chee Yang Ng, Muar, MY;

Stefan Woetzel, Erfurt, DE;

Edward Fuergut, Dasing, DE;

Thai Kee Gan, Melaka, MY;

Chee Hong Lee, Melaka, MY;

Jayaganasan Narayanasamy, Melaka—Durian Tunggal, MY;

Ralf Otremba, Kaufbeuren, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/492 (2006.01); H01L 23/538 (2006.01); H01L 29/66 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49844 (2013.01); H01L 23/3735 (2013.01); H01L 23/4924 (2013.01); H01L 23/5383 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 29/66431 (2013.01); H01L 23/3185 (2013.01); H01L 23/49827 (2013.01); H01L 24/06 (2013.01); H01L 24/32 (2013.01); H01L 2224/0556 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/32227 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor package includes: a carrier having an electrically insulative body and a first contact structure at a first side of the electrically insulative body; and a semiconductor die having a first pad attached to the first contact structure of the carrier, the first pad being at source or emitter potential. The first pad is spaced inward from an edge of the semiconductor die by a first distance. The semiconductor die has an edge termination region between the edge and the first pad. The first contact structure of the carrier is spaced inward from the edge of the semiconductor die by a second distance greater than the first distance such that an electric field that emanates from the edge termination region in a direction of the carrier during normal operation of the semiconductor die does not reach the first contact structure of the carrier. Methods of production are also provided.


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