The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

May. 05, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Marie Krysak, Portland, OR (US);

James Blackwell, Portland, OR (US);

Lauren Doyle, Portland, OR (US);

Brian Zaccheo, Hillsboro, OR (US);

Patrick Theofanis, Pasadena, CA (US);

Michael Robinson, Beaverton, OR (US);

Florian Gstrein, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); G03F 7/004 (2006.01); G03F 7/20 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); G03F 7/0042 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); G03F 7/2004 (2013.01);
Abstract

Techniques, structures, and materials related to extreme ultraviolet (EUV) lithography are discussed. Multiple patterning inclusive of first patterning a grating of parallel lines and second patterning utilizing EUV lithography to form plugs in the grating, and optional trimming of the plugs may be employed. EUV resists, surface treatments, resist additives, and optional processing inclusive of plug healing, angled etch processing, electric field enhanced post exposure bake are described, which provide improved processing reliability, feature definition, and critical dimensions.


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